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| Ordering number : ENN7020 FTD1014 P-Channel Silicon MOSFET FTD1014 Load Switching Applications Load S / W Use Features * * * * Package Dimensions unit : mm 2155A [FTD1014] 0.65 0.95 Low ON-resistance. 2.5V drive. Mounting height 1.1mm. Composite type, facilitating high-density mounting. 3.0 0.425 8 5 0.5 4.5 6.4 1 0.25 4 (0.95) 1 : Drain1 2 : Source1 3 : Source1 0.125 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 SANYO : TSSOP8 Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW10s, duty cycle1% Conditions 0.1 1.0 Ratings -20 10 --2 -15 0.8 1.0 150 --55 to +150 Unit V V A A W W C C Mounted on a ceramic board (1000mm 2!0.8mm) 1unit Mounted on a ceramic board (1000mm2!0.8mm) Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs Conditions ID=--1mA, VGS=0 VDS=-20V, VGS=0 VGS=8V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=--2A Ratings min --20 --1 10 --0.4 4.2 6 --1.4 typ max Unit V A A V S Marking : D1014 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 73001 TS IM TA-2736 No.7020-1/4 FTD1014 Continued from preceding page. Parameter Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol RDS(on) 1 RDS(on) 2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=--2A, VGS=--4V ID=--2A, VGS=--2.5V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=--10V, VGS=--10V, ID=-2A VDS=--10V, VGS=--10V, ID=-2A VDS=--10V, VGS=--10V, ID=-2A IS=--2A, VGS=0 Ratings min typ 68 92 820 150 100 17 60 66 56 17 1.5 2 --0.8 --1.5 max 89 130 Unit m m pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit VDD= --10V VIN 0V --4V VIN PW=10s D.C.1% ID= --2A RL=5 Electrical Connection D2 S2 S2 G2 D VOUT G FTD1014 P.G 50 S D1 S1 --6 S1 G1 ID -- VDS --10 .0V --6. 0V --4 .0V --3 .0 V .5V --6 ID -- VGS VDS= --10V --5 --5 --2 Drain Current, ID -- A --4 . --2 0V Drain Current, ID -- A --4 --3 --3 VGS= --1.5V --1 75 Ta = 0 --0.5 --1.0 --1 C 25 --1.5 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 IT00392 200 --2.0 --2.5 IT00393 Drain-to-Source Voltage, VDS -- V 200 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m Ta=25C ID= --2.0A 150 150 C .0A 100 100 --2.0 ,I = --4.0V D V GS= = VGS = --2 V, I D --2.5 --25 C --2 --2 A 50 50 0 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 IT00395 Gate-to-Source Voltage, VGS -- V IT00394 Ambient Temperature, Ta -- C No.7020-2/4 FTD1014 Forward Transfer Admittance, yfs -- S 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 IT00396 --10 --9 yfs -- ID VDS= --10V --10 7 5 3 2 IF -- VSD VGS=0 Forward Current, IF -- A 75C Ta= C --25 --1.0 7 5 3 2 --0.1 7 5 3 2 25 C --0.01 7 5 3 2 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --0.001 10000 7 5 3 2 Ciss, Coss, Crss -- VDS f=1MHz Gate-to-Source Voltage, VGS -- V Drain Current, ID -- A Diode Forward Voltage, VSD -- V Ta 25 =75 --25 C C C IT00397 VGS -- Qg VDS= --10V ID= --2A --8 --7 --6 --5 --4 --3 --2 --1 Ciss, Coss, Crss -- pF 1000 7 5 3 2 100 7 5 3 2 10 0 --2 --4 --6 --8 Ciss Coss Crss --10 --12 --14 --16 --18 --20 0 0 2 4 6 8 10 12 14 16 18 Drain-to-Source Voltage, VDS -- V 1000 7 5 IT00398 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 Total Gate Charge, Qg -- nC IT00399 SW Time -- ID ASO IDP= --15A <10s 1m VDD= --10V VGS= --4V Drain Current, ID -- A Switching Time, SW Time -- ns 3 2 100 7 5 3 2 10 7 5 3 2 1.0 --0.1 2 3 5 7 2 3 5 7 tr s 10 ID= --2A DC op td(off) ms 10 era 0m s tf td(on) Operation in this area is limited by RDS(on). tio n --1.0 Drain Current, ID -- A 1.5 --10 IT00400 --0.01 --0.01 Ta=25C Single pulse Mounted on a ceramic board(1000mm2!0.8mm)1unit 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 PD -- Ta Drain-to-Source Voltage, VDS -- V 5 7 --10 23 IT03264 Mounted on a ceramic board(1000mm2!0.8mm) Allowable Power Dissipation, PD -- W 1.0 0.8 To ta ld is 1un sipa tio it n 0.5 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT03265 No.7020-3/4 FTD1014 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2001. Specifications and information herein are subject to change without notice. PS No.7020-4/4 |
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